On the microscopic structure of the EL6 defect in GaAs

Autor:	Th. Steinegger, M. Jurisch, B. Gründig-Wendrock, J R Niklas
Rok vydání:	2001
Předmět:	Laser scattering Materials science Condensed matter physics Annealing (metallurgy) Semiconductor materials Infrared spectroscopy Defect engineering Electrical and Electronic Engineering Atomic physics Condensed Matter Physics Electronic Optical and Magnetic Materials Positron annihilation
Zdroj:	Physica B: Condensed Matter. :745-748
ISSN:	0921-4526
DOI:	10.1016/s0921-4526(01)00799-2
Popis:	Among the intrinsic defects in GaAs the EL6 gains more attention due to its properties as a non-radiative recombination centre. Also, for an efficient defect engineering its atomistic structure becomes an important question. There are many suggestions for this structure in the literature, however, nothing definite is known so far. From a combination of results from PICTS experiments to measure the EL6 concentration, positron annihilation, infrared absorption and laser scattering tomography arguments are put forward which point to a structure AsGa–VAs for the EL6.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3defe236ee45db4e9cc30ed8d9fb93ab https://doi.org/10.1016/s0921-4526(01)00799-2 Zobrazit plný text záznamu Full Text from ScienceDirect