| Autor: | B. Schönfelder, G. Gottstein, W. Hu, Lasar S. Shvindlerman, Dmitri A. Molodov |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Doping Analytical chemistry chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials Crystallography Tilt (optics) chemistry Aluminium Atom General Materials Science Grain boundary Impurity doping Gallium High-resolution transmission electron microscopy |
| Zdroj: | Interface Science. 8:335-349 |
| ISSN: | 0927-7056 |
| DOI: | 10.1023/a:1008775611238 |
| Popis: | A HRTEM investigation was carried out on the Σ7{213} tilt grain boundary in bicrystals of both high purity aluminium and same aluminium doped with 10 ppm gallium. It was determined by image simulation that the bright contrast in the TEM images show the positions of atom columns. By measuring contrast profiles it was found that in the specimen of aluminium-10 ppm gallium, the atoms which are closest to the grain boundary, are anomalously shifted along the ‹121› direction compared to equivalent atom positions of the pure aluminium sample. This anomalous shift makes the disparity in the grain boundary structure of both samples. It is assumed that this anomalous shift is most likely the reason for the higher mobility of the grain boundary of the aluminium-10 ppm gallium sample. |
| Databáze: | OpenAIRE |
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