Si/SiGe HBTs for application in low power ICs
| Autor: | D. Temmler, D. Behammer, J.N. Albers, U. Konig, D. Knoll |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Fabrication
Materials science Silicon Passivation business.industry Circuit design Heterojunction bipolar transistor Bipolar junction transistor Electrical engineering chemistry.chemical_element Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials Power (physics) chemistry Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 39:471-480 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(95)00165-4 |
| Popis: | Broad-band and wireless communication seem to be a technology battleground, with new high performance demands to the applied active and passive devices, and the optimization of circuit design. Up to now, there are several technologies for low power and low noise or high speed applications, e.g. the advanced silicon bipolar transistor, III–V HBTs, HEMTs, and MODFETs. In this paper, the advantage of Si/SiGe HBTs are presented and discussed with a view to their fabrication in a low-cost mass production technology. For further increasing the performance of the Si/SiGe HBT, the vertical doping profile and the lateral structure need to be optimized. Utilizing new low temperature ultra-scaled fully self-aligned integration concepts, a Si heterojunction bipolar device can be achieved featuring high package density, good passivation and long term stability. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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