Time-of-flight photoconductivity in a-Si:H

Autor:	R. A. Street, J.C. Zesch
Rok vydání:	1983
Předmět:	Time of flight Materials science Photoconductivity Materials Chemistry Ceramics and Composites Dangling bond Analytical chemistry Trapping Atomic physics Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Journal of Non-Crystalline Solids. :449-452
ISSN:	0022-3093
DOI:	10.1016/0022-3093(83)90617-8
Popis:	We report measurements of the trapping rates of carriers at charged and neutral dangling bonds in a-Si:H, using time-of-flight photoconductivity. The temperature dependence of the trapping rate is also measured from 150K to 340K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3de11cba21cf1bfbaf3d0fab6f24dd23 https://doi.org/10.1016/0022-3093(83)90617-8 Zobrazit plný text záznamu