Effects of Ta-oxide interlayer on the Schottky barrier parameters of Ni/n-type Ge Schottky barrier diode
| Autor: | Hyung-Joong Yun, Jae-Chan Jeong, Kyu-Hwan Shim, Vallivedu Janardhanam, Hyobong Hong, Chel-Jong Choi, I. Jyothi, Sung-Nam Lee, Hoon-Ki Lee |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Schottky barrier Oxide Nanotechnology 02 engineering and technology Substrate (electronics) 01 natural sciences law.invention chemistry.chemical_compound Magazine law Electric field 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics Condensed matter physics Schottky diode 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry 0210 nano-technology Science technology and society Stoichiometry |
| Zdroj: | Microelectronic Engineering. 163:26-31 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2016.06.006 |
| Popis: | The effect of Ta-oxide interlayer on the Schottky barrier parameters of Ni/n-type Ge Schottky barrier diode (SBD) was investigated. The introduction of the Ta-oxide interlayer in-between Ni film and Ge substrate resulted in an increase in the barrier height as against the conventional Ni/n-type Ge SBD. Furthermore, increase in the thickness of the Ta-oxide interlayer led to the increase in barrier height and decrease in ideality factor, which could be associated with the improvement of interface quality of Schottky junction. 5nm-thick Ta-oxide interlayer was more stoichiometric than 3nm-thick Ta-oxide one, which was effective in the reduction of interface state density and ideality factor. An investigation of the electric field dependence of the reverse current in the Ni/n-type Ge SBDs with and without Ta-oxide revealed that the Poole-Frenkel emission mechanism dominates the current conduction of both devices in the reverse bias region. Display Omitted The effect of Ta-oxide interlayer on electrical properties of Ni/n-type Ge SBD was investigated.Barrier height increased with increasing the thickness of Ta-oxide interlayer.Increase in the thickness of Ta-oxide interlayer led to decrease in interface states.5nm-thick Ta-oxide interlayer was more stoichiometric than 3nm-thick Ta-oxide one.Leakage current of all SBDs was dominated by Poole-Frenkel emission mechanism. |
| Databáze: | OpenAIRE |
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