Effects of boron incorporation on the structural, optical and electrical properties of sol–gel-derived ZrO2 gate dielectrics

Autor:	D.Q. Xiao, J.W. Zhang, Xi-Bao Chen, P. Jin, Gang He, Z.Q. Sun, C.Y. Zheng, M. Zhang, J. Gao
Rok vydání:	2015
Předmět:	Materials science Band gap Mechanical Engineering Doping Metals and Alloys Analytical chemistry chemistry.chemical_element Dielectric Microstructure chemistry Mechanics of Materials Ellipsometry Materials Chemistry Spectroscopy Boron Sol-gel
Zdroj:	Journal of Alloys and Compounds. 649:1273-1279
ISSN:	0925-8388
DOI:	10.1016/j.jallcom.2015.07.210
Popis:	The effect of boron (B) doping on the microstructure, band gap energy and electrical properties of ZrO 2 gate dielectrics deposited by sol–gel method at low temperature were systemically investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the thicknesses and optical constants of ZrO 2 gate dielectrics have been determined precisely. The B incorporation dependent electrical properties of ZrO 2 films were determined by capacitance–voltage ( C–V ) and leakage current density–voltage ( J–V ) measurements. The dominant conduction mechanisms of Al/B:ZrO 2 / n -Si MOS structures have been discussed systematically in detail. As a result, the optimized B incorporation content has been obtained to achieve ZrO 2 gate dielectrics with high quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3dd697592a6db37c9442030c34b12bc8 https://doi.org/10.1016/j.jallcom.2015.07.210 Zobrazit plný text záznamu Full Text from ScienceDirect