Early growth stages of Ge0.85Si0.15 on Si(001) from Bi solution

Autor:	E. Bauser, Silke Christiansen, W. Dorsch, Martin Albrecht, Horst P. Strunk, P.O. Hansson
Rok vydání:	1995
Předmět:	Crystallography Yield (engineering) Materials science Condensed matter physics Strain (chemistry) Atomic force microscopy Materials Chemistry Strain energy density function Surfaces and Interfaces Condensed Matter Physics Epitaxy Finite element calculations Surfaces Coatings and Films
Zdroj:	Surface Science. :896-901
ISSN:	0039-6028
DOI:	10.1016/0039-6028(95)00152-2
Popis:	We investigate by atomic force microscopy the early growth stages of Ge 0.85 Si 0.15 grown by solution epitaxy on Si(001). The layers grow in the Stranski-Krastanov growth mode with facetted islands of pyramidal and, with further growth, truncated pyramidal shape. Finite element calculations of the strain fields within the islands at different growth stages yield an increasing strain energy density near the island basis edges. The effect of the increase in strain energy density is to limit the lateral growth, whereas the relaxed top regions enhance growth in height.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3dc4051c5f84d332a94b17449625d2df https://doi.org/10.1016/0039-6028(95)00152-2 Zobrazit plný text záznamu Full Text from ScienceDirect