The effect of thermal annealing on the layered structure of smectic liquid crystalline organic semiconductor on polyimide gate insulator and its OFET performance
| Autor: | Jong Chan Won, Sung-Kwon Hong, Kwang-Suk Jang, Jae-Won Ka, Sohee Kim, Jinsoo Kim, Mi Hye Yi, Sungmi Yoo, Aryeon Kim, Yun Ho Kim |
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| Rok vydání: | 2016 |
| Předmět: |
Organic field-effect transistor
Materials science business.industry Annealing (metallurgy) Mechanical Engineering Metals and Alloys Mesophase 02 engineering and technology Crystal structure 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Electronic Optical and Magnetic Materials Organic semiconductor Mechanics of Materials Liquid crystal Materials Chemistry Optoelectronics Thin film 0210 nano-technology business Polyimide |
| Zdroj: | Synthetic Metals. 220:311-317 |
| ISSN: | 0379-6779 |
| DOI: | 10.1016/j.synthmet.2016.06.021 |
| Popis: | The electrical performance of organic field-effect transistors (OFETs) depends on the quality of thin-film organic semiconductors, which is significantly affected by solution-processing conditions and additional processes. We investigated the effects of post-thermal annealing on the thin-film morphologies of liquid crystalline organic semiconductors on polyimide gate insulator surface and the FET performances of the films. The active material selected for the OFETs was 2-decyl-7-phenyl-[1]benzothieno[3,2 -b ][1]benzothiophene (Ph-BTBT-C 10 ), which shows a highly ordered smectic E (SmE) mesophase and polycrystalline thin films feature very high mobility. We aimed to produce well defined molecular orientation and crystal structure in thin-film Ph-BTBT-C 10 on polyimide gate insulator not typical SiO 2 gate insulator via thermal annealing process. Uniform bilayer- or monolayer-structured polycrystalline thin films were obtained on polymer gate insulator after thermal annealing at a SmE (over 148 °C) and SmA (over 213 °C) liquid crystalline phase temperature, respectively. The OFET using bilayer-structured thin film showed high performance with a mobility of 2.27 cm 2 /V s. |
| Databáze: | OpenAIRE |
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