Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures
| Autor: | T. Monahan, F. Agahi, Cynthia M. Hanson, Kei May Lau, Ricardo Bosco, R. T. Lareau |
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| Rok vydání: | 1994 |
| Předmět: |
Solid-state physics
Chemistry business.industry Analytical chemistry chemistry.chemical_element Heterojunction Substrate (electronics) Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Materials Chemistry Optoelectronics Electrical and Electronic Engineering Fermi gas business Layer (electronics) Indium Group 2 organometallic chemistry |
| Zdroj: | Journal of Electronic Materials. 23:649-652 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02653351 |
| Popis: | Carrier concentration spikes at the epilayer/substrate interface were observed in some two-dimensional electron gas AIGaAs/GaAs structures grown by low pressure organometallic vapor phase epitaxy. Using secondary ion mass spectroscopy, the carrier spikes were correlated with indium. Under certain growth conditions an anomalous interfacial layer, which is compositionally inhomogeneous, is formed producing an enhanced carrier density. Procedures are described which reduce the presence of indium at the epilayer/substrate interface and eliminate the carrier spike. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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