Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots

Autor:	Yi Chang Li, Yen Hsiang Chen, Yen Lin Lai, Sheng Chieh Tsai, Yun Li Li, Cheng-Hsueh Lu, Chuan-Pu Liu
Rok vydání:	2013
Předmět:	Materials science business.industry Spinodal decomposition Mechanical Engineering Metals and Alloys Chemical vapor deposition Green-light law.invention Mechanics of Materials law Quantum dot Materials Chemistry Optoelectronics Quantum efficiency Light emission business Diode Light-emitting diode
Zdroj:	Journal of Alloys and Compounds. 555:250-254
ISSN:	0925-8388
DOI:	10.1016/j.jallcom.2012.12.069
Popis:	InGaN/GaN-based green light-emitting diodes (LEDs) with high-density ultra-small In-rich quantum dots (QDs) embedded in InGaN multiple quantum wells via spinodal decomposition are grown by metal organic chemical vapor deposition. The density and average size of In-rich QDs increased from 1 × 1011 cm−2 to 2 × 1012 cm−2 and decreased from 8.4 nm to 2.3 nm, respectively, when the NH3 flow rate was reduced during the growth of InGaN active layers. The associated growth mechanism of QDs is discussed. High-density ultra-small QDs with improved internal quantum efficiency due to good carrier confinement and a small number of defects are obtained. The proposed approach improves the light emission efficiency of InGaN QD-based LEDs and a 10% enhancement in light output power for packaged lamp-form LEDs is demonstrated in this work.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3dbbc9d519abbb4d5e446316ddc06152 https://doi.org/10.1016/j.jallcom.2012.12.069 Zobrazit plný text záznamu Full Text from ScienceDirect