Reliability and microstructure of Al‐Si‐V‐Pd alloy films for use in ultralarge scale integration

Autor:	A. G. Dirks, R. A. Augur
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) Metallurgy Alloy Vanadium chemistry.chemical_element engineering.material Microstructure Electromigration Grain size Corrosion chemistry Aluminium engineering Texture (crystalline)
Zdroj:	Applied Physics Letters. 64:704-706
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.111040
Popis:	New data on a highly reliable interconnect material based on aluminum will be presented. As compared with conventional Al‐Si‐Cu alloy films, quaternary Al‐Si‐V‐Pd films with only 0.1 at. % vanadium and 0.1 at. % palladium combine excellent plasma etchability with good corrosion resistance. Electromigration tests of Al‐Si‐V‐Pd films have shown a surprisingly high stability at 180 °C. Studies of microstructural attributes show: (a) for Al‐Si‐V‐Pd relative to Al‐Si, texture is not significantly changed and average grain size is slightly increased, and (b) the dominant factor leading to a highly stable microstructure is the combined presence of finely dispersed, small precipitates of both (Al,V) and (Al,Pd) phases.
Databáze:	OpenAIRE
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