| Autor: |
R.M. Park, Y.W. Lin, P. Ribas, Y.C. Tzeng |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
Superlattices and Microstructures. 12:287-291 |
| ISSN: |
0749-6036 |
| DOI: |
10.1016/0749-6036(92)90266-8 |
| Popis: |
A novel approach to grow high quality In 0.4 Ga 0.6 As epilayers on GaAs is reported which involves the controlled propagation of dislocations via a carefully designed multi-stage strain-relief superlattice structure. Several kinds of multi-stage strain-relief superlattice structures were designed in order to improve the electronic and optical characteristics of the In 0.4 Ga 0.6 As epilayers. Hall measurements performed on unintentionally doped In 0.4 Ga 0.6 As layers indicated the room-temperature electron concentration in the epilayers to be around 1 × 10 15 cm −3 while electron momilities were around 4700cm 2 /V · s. In addition, strong band-edge photoluminescence were recorded from the epilayers, the luminescence peak of our best sample occurring at 1304 nm had a linewidth around 7 meV at 13 K. A planar, low dark current and high sensitivity p-i-n photodetector was fabricated on the epilayer materials. The detector has quantum efficiency of 42% and a peak responsivity of 0.45 A/W at 1.3 μm wavelength. The reverse leakage current for our detector with active area of 2 × 10 −4 cm 2 is 5 × 10 −9 A at −5 V, and the breakdown voltage exceeds 25 V. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
