Phenomenological Compact Model for QM Charge Centroid in Multigate FETs

Autor:	Ali M. Niknejad, Sriramkumar Venugopalan, M. A. Karim, C. Hu, Sayeef Salahuddin
Rok vydání:	2013
Předmět:	Physics business.industry Doping Centroid Biasing Charge (physics) Radius Electron Electronic Optical and Magnetic Materials Computational physics Fin (extended surface) MOSFET Optoelectronics Electrical and Electronic Engineering business
Zdroj:	IEEE Transactions on Electron Devices. 60:1480-1484
ISSN:	1557-9646 0018-9383
Popis:	We present a phenomenological compact model of the inversion charge centroid considering both the structural and electrical confinements in multigate FETs. The developed new model shows a good match with Technology-CAD (TCAD) data for both physical parameters such as fin thickness in FinFET and wire radius in cylindrical FET, channel doping, and electrical bias variation. With the introduction of fitting parameters, the model is capable of handling hole and electron carriers, various channel materials, and process variations, such as fin shape, etc.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3dac54668b1d39cda0747aaceb7a9c3d https://doi.org/10.1109/ted.2013.2245419 Zobrazit plný text záznamu