Passivation of GaAs (100) with an Adhesion Promoting Self-Assembled Monolayer

Autor:	Steven W. Keller, John F. Kauffman, Ting Hou, C. Michael Greenlief, and Louis Nelen
Rok vydání:	1997
Předmět:	Photoluminescence Materials science Passivation General Chemical Engineering Oxide Self-assembled monolayer Nanotechnology General Chemistry Photochemistry chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Ellipsometry Etching (microfabrication) Monolayer Materials Chemistry
Zdroj:	Chemistry of Materials. 9:3181-3186
ISSN:	1520-5002 0897-4756
DOI:	10.1021/cm9704995
Popis:	In this paper we demonstrate that photoluminescence (PL) from GaAs exposed to (3-mercaptopropyl)trimethoxysilane (MPT) exhibits a 10-fold enhancement over that of an oxidized sample. The PL enhancement is attributed to the formation of sulfur−surface bonds. We demonstrate that the MPT surface film that results from the treatment described herein is a monolayer thick by ellipsometry, and we examine the composition of the GaAs/MPT interfacial region using X-ray photoelectron spectroscopy (XPS). The XPS results indicate that the native oxide is removed by the etching procedure, and reoxidation of the surface is minimal during the subsequent deposition of MPT. The nature of the sulfur−surface bond is discussed in view of the XPS results reported here and those of previous measurements by other researchers. The self-assembled monolayers of MPT that forms on the GaAs surface leave a trimethoxy-silyl terminated surface that can be polymerized by exposure to weak acid. We demonstrate that the polymerized overlaye...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d9f2dd352a74468728b4d3e37e1237c https://doi.org/10.1021/cm9704995