Development of chip shrink technology for lateral-type GaN based HFETs using SiO2/polyimide dual IMD layers

Autor:	Hwa-Young Ko, Seung Kyu Oh, Taehoon Jang, Joon Seop Kwak
Rok vydání:	2015
Předmět:	O2 plasma Materials science business.industry Optoelectronics Low leakage Algan gan Dielectric Drain current business Chip Polyimide Electronic Optical and Magnetic Materials
Zdroj:	Electronic Materials Letters. 11:213-216
ISSN:	2093-6788 1738-8090
Popis:	This study examined chip shrink technology for lateral-type AlGaN/GaN HFETs on 150 mm Si substrates fabricated with a bonding pad above the active area (BPAA) structure. The SiO2/polyimide layers were used as inter metal dielectric (IMD) layers, which yielded a very low leakage current of 0.58 nA/mm2 even at 1 kV and a good adhesion property after O2 plasma treatment. The fabricated AlGaN/GaN HFETs with the BPAA structure exhibited good device characteristics, such as a low leakage current of 7.1 nA at 1 kV and a drain current of 3.6 A at 2 V, which has the same value compared to that of the AlGaN/GaN HFETs without the BPAA structure, even though the BPAA structure reduced the size of chip by 40%. This suggests that the BPAA structure is a promising method for reducing the size and cost of the lateral-type AlGaN/GaN HFETs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d9aa578fd23b805b13f4c4e6fadbcbc https://doi.org/10.1007/s13391-014-4298-9 Zobrazit plný text záznamu Full text from SpringerLink