Successful recovery of moisture-induced TDDB degradation for Cu/ULK(k=2.5) BEOL interconnect

Autor:	Kyu-hee Han, Jong-Myeong Lee, Ok-Hee Park, Ho-Kyu Kang, Jang-Hee Lee, Sang Hoon Ahn, Gil-heyun Choi, Viet Ha Nguyen, Chilhee Chung, Tae-Soo Kim
Rok vydání:	2012
Předmět:	Back end of line Materials science Dielectric strength Diffusion barrier Analytical chemistry Copper interconnect Electrical breakdown Degradation (geology) Time-dependent gate oxide breakdown Dielectric Composite material
Zdroj:	2012 IEEE International Interconnect Technology Conference.
Popis:	Cu/ULK(k=2.5) dual Damascene back end of line(BEOL) dielectric degradation was studied with respect to post Cu CMP delay prior to dielectric diffusion barrier deposition. The threshold of the delay time was observed beyond which line-to-line leakage current increased rapidly while the dielectric breakdown voltage decreased. This air exposure-dependent degradation was attributed to moisture absorption by damaged ULK during integration, and caused premature TDDB (time-dependent dielectric breakdown) failure. It was found that combination of moisture removal by damage-free UV and mild plasma treatment was able to restore dielectric breakdown voltage as well as TDDB time to failure even well past the threshold of delay time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d95f46778769806a005822dd3552456 https://doi.org/10.1109/iitc.2012.6251653 Zobrazit plný text záznamu