Electron energies and states at the deep impurity level in a semiconductor

Autor:	Alexander S. Serov, A. G. Mironov
Rok vydání:	2011
Předmět:	Physics Variational method Field (physics) Excited state General Physics and Astronomy Electron Atomic physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Ground state Wave function Quantum well Ritz method
Zdroj:	Moscow University Physics Bulletin. 66:272-277
ISSN:	1934-8460 0027-1349
DOI:	10.3103/s0027134911030143
Popis:	The problem of the model description of the electron state at the deep impurity level in a semiconductor is solved. The potential of the impurity center is chosen as the superposition of a Coulomb field and a spherical quantum well with a flat bottom. The energy level and the wave function of the ground state are determined by the exact method and the variational Ritz method in wide ranges of parameters of the well. An algorithm for determining the energies and wave functions of the first excited states is presented. The advantages of the variational method over the exact solution are demonstrated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d88adaea32bd5495840063f94e4fd37 https://doi.org/10.3103/s0027134911030143 Zobrazit plný text záznamu Full text from SpringerLink