Preparation and photoelectric properties of praseodymium-doped cuprous oxide thin films
| Autor: | Fu-xin Zhong, Yong-bin Wu, Ying-jie Zhao, Wei Zhou, Yan Li |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Photocurrent Materials science Passivation Praseodymium business.industry Doping Analytical chemistry chemistry.chemical_element Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Crystallinity Semiconductor X-ray photoelectron spectroscopy chemistry 0103 physical sciences Electrical and Electronic Engineering Thin film business |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 31:3092-3100 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-020-02855-4 |
| Popis: | Pr-doped Cu2O films were deposited on Cu sheet substrates by hydrothermal method with different doping concentrations of Pr(NO3)3. The result shows that undoped and Pr-doped Cu2O thin films are all p-type semiconductors. Compared with undoped Cu2O, the photovoltage, photocurrent density, and carrier concentration of Pr-doped Cu2O increase to 0.4401 V, 1.1 mA/cm2, and 9.66 × 1019 cm−3, respectively. And the increments are 0.0828 V, 0.52 mA/cm2, and 8.931 × 1019 cm−3, respectively. The increments of the capacitances of Pr doping modification illustrate that Pr element has a strong passivation effect on the composite of electrons and holes, thus improving the photoelectric performance of Cu2O. The preferential growth surface of Pr-doped Cu2O film is (111) and (200), and the crystallinity of (111) plane is optimal. After doping modification, the grain size of Pr-doped Cu2O is increased and the particle size is relatively uniform. The mass percentage of Pr element is 0.46% and the forbidden band width reduces from 2.02 to 1.83 eV. XPS peak fitting of Pr-doped Cu2O indicates that Pr element is doped into Cu2O film. |
| Databáze: | OpenAIRE |
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