Investigation of resistive switching effect in nanocrystalline TiO2 thin film for neuromorphic system manufacturing

Autor:	O. A. Ageev, R. V. Tominov, V. A. Smirnov, D. D. Dukhan, E. G. Zamburg, V. I. Avilov
Rok vydání:	2019
Předmět:	History Materials science Neuromorphic engineering business.industry Resistive switching Optoelectronics Thin film business Nanocrystalline material Computer Science Applications Education
Zdroj:	Journal of Physics: Conference Series. 1400:055032
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/1400/5/055032
Popis:	Effect of resistive switching in TiO2 thin film was investigated. It was shown, resistive switching from high resistance state (HRS) to low resistance state (LRS) has occurred at 3.2±0.2 V, and from LRS to HRS at -2.8±0.5 V. Endurance test shown that HRS decreased from 42.31±5.26 kΩ to 26.45±6.14 kΩ, LRS increased from 2.25±1.15 kΩ to 3.45±1.18 kΩ. HRS/LRS coefficient has decreased from 18.8 to 7.6. Time-stability of TiO2 surface charge was investigated. It was shown, that voltage decreased from 320±21 to 22±5 mV during 90 minutes and square side increased from 3.43±0.12 to 4.12±0.14 µm during 90 minutes. The results can be useful for neuromorphic systems manufacturing based on nanocrystalline TiO2 films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d82ad28403cfad049ab3380602c04b2 https://doi.org/10.1088/1742-6596/1400/5/055032 Zobrazit plný text záznamu