Design and Analysis of Improved Phase-Transition FinFET Utilizing Negative Capacitance
| Autor: | Pranshoo Upadhyay, Bhaskar Awadhiya, Pravin N. Kondekar, Sameer Yadav |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Physics Phase transition Condensed matter physics 01 natural sciences Capacitance Electronic Optical and Magnetic Materials Subthreshold swing 0103 physical sciences Steep slope Electrical and Electronic Engineering Drain current Critical thickness Negative impedance converter |
| Zdroj: | IEEE Transactions on Electron Devices. 68:853-859 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2020.3043222 |
| Popis: | Phase transition FinFET (PT-FinFET) is an emerging steep slope device that utilizes phase transition material (PTM) at the source of the host FinFET to achieve steep switching and boost ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio compared to conventional transistors. Due to nonzero $\rho _{\text {MET}}$ of the assisting PTM, PT-FinFET suffers from low ${I}_{ \mathrm{\scriptscriptstyle ON}}$ as compared to baseline FinFET. To address this issue, we propose, analyze, and mathematically justify a device design exhibiting enhanced subthreshold swing (SS), ${I}_{ \mathrm{\scriptscriptstyle ON}}$ and ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ by exploiting a negative capacitance material at the gate of the PT-FinFET. In the proposed model, critical thickness ( ${t}_{\textit {fe}}$ ) of 3 nm for negative capacitance material was achieved. In comparison with the baseline FinFET and negative capacitance PT-FinFET, the proposed device (NC-PT-FinFET) is able to improve ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio by 3.02 and 2.94 decades, respectively. Furthermore, SS of nearly 10 mV/decade is achieved over 4 decades of drain current with minimum value of 6.8 mV/decade for ${t}_{\textit {fe}}\,\,= {3}$ nm. |
| Databáze: | OpenAIRE |
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