Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {1 01¯m} faceted surface
| Autor: | Ting Zhi, Junjun Xue, Dunjun Chen, Jiangwei Chen, Baohua Zhang, Rong Zhang, Mei Ge, Qing Cai, Youdou Zheng, Lianhui Wang |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Diffraction Materials science Condensed matter physics Mechanical Engineering chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences law.invention Reciprocal lattice Crystallography chemistry Mechanics of Materials Transmission electron microscopy law 0103 physical sciences X-ray crystallography General Materials Science Electron microscope 0210 nano-technology Quantum well Indium |
| Zdroj: | Materials Letters. 208:19-22 |
| ISSN: | 0167-577X |
| Popis: | X-ray diffraction (XRD) reciprocal space mappings (RSMs) and transmission electron microscopy (TEM) were applied to structurally characterize InGaN multi-quantum-well (MQW) alloys with a novel structure which were epi-grown successively on a rough thick n-InGaN layer with {1 0 1 ¯ m} (2 1 ¯ m〉 modulation direction, was observed by TEM and unconventional shift of satellite peaks in reciprocal space took place in XRD (1 0 1 ¯ 5) RSM. The two scarce phenomena are attributed to the special morphology of V-MQWs. |
| Databáze: | OpenAIRE |
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