High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation
| Autor: | Wataru Saito, Shin Ichi Nishizawa, Sankara Narayanan Ekkanath Madathil, Peng Luo |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Power loss Materials science 020208 electrical & electronic engineering 02 engineering and technology Insulated-gate bipolar transistor 01 natural sciences Controllability Safe operation Robustness (computer science) Power electronics 0103 physical sciences Trench 0202 electrical engineering electronic engineering information engineering Electronic engineering Current density |
| Zdroj: | 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). |
| DOI: | 10.1109/apec39645.2020.9124293 |
| Popis: | High dV/dt controllability of IGBT is an important factor for flexible design as well as low switching loss in power electronics systems. However, Dynamic Avalanche (DA) phenomenon poses a fundamental limit on their dV/dt control range, operating current density, turn-off power loss as well as reliability. Overcoming this phenomenon is essential to ensure their safe operation and high robustness in emerging electric transport. In this work, detailed analysis of 1.2 kV trench gated IGBTs is undertaken through experiments and calibrated TCAD 3-dimensional simulations to show the fundamental cause of the low dV/dt controllability of conventional IGBTs and a method to achieve DA free design by Trench Clustered IGBT (TCIGBT). The potential of TCIGBT for ultra-high current density operation with high dV/dt controllability is also presented. |
| Databáze: | OpenAIRE |
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