Novel Methods For Ultrashallow Low Resistance Junction Formation
| Autor: | S. H. Jain, Peter B. Griffin, James D. Plummer |
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| Rok vydání: | 2006 |
| Předmět: | |
| Zdroj: | ECS Transactions. 3:45-56 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/1.2356263 |
| Popis: | Source drain parasitic resistance is expected to become one of the major roadblocks to the continued improvements of device performance. According to the ITRS roadmap, the source drain parasitic resistance is expected to become as much as 26% of the intrinsic device resistance by the 45 nm technology node. This has driven the development of annealing tools where the silicon surface is heated and then cooled down on the time scale of milliseconds. While these tools provide improved activation, the boron activation here is limited by the solid solubility. It has been observed that the boron activation obtained after solid phase epitaxial regrowth increases with the temperature at which the regrowth is carried out. By carrying out the regrowth at a high temperature it is possible to obtain active concentrations as high as 6.5×1020/cm3 - well above the solubility limits of B in silicon. Due to the low thermal budget, the profiles undergo very little diffusion, resulting in extremely abrupt junctions that are limited only by the implanted profile. |
| Databáze: | OpenAIRE |
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