Properties of Thermal Gadolinium Oxide Films on Silicon

Autor:	Kuo-Yang Horng, Ping-Yu Kuei, Ming-Jer Jeng, Hong-Hsi Ko, Liann-Be Chang
Rok vydání:	2005
Předmět:	Thermal oxidation Materials science Silicon Gadolinium General Engineering Analytical chemistry Oxide General Physics and Astronomy chemistry.chemical_element Dielectric chemistry.chemical_compound chemistry Transmission electron microscopy Grain boundary Leakage (electronics)
Zdroj:	Japanese Journal of Applied Physics. 44:3205
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.44.3205
Popis:	The formation and electrical characteristics of thermal gadolinium (Gd) oxide films were investigated. A good uniform interface formed by proper treatment was observed by transmission electron microscopy (TEM) examination. The dielectric constant of the thermal Gd oxide films was approximately 10 from capacitance–voltage measurements. The X-ray diffraction (XRD) pattern of the thermal Gd oxide (Gd2O3) films showed that they had a cubic structure. The Gd oxides that were oxidized at higher temperatures exhibited smaller grain boundaries than those oxidized at lower temperatures. The grain boundary size of the Gd oxides significantly affects the leakage property. A good Gd oxide quality can be obtained when the thermal oxidation temperature is above 900°C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d6ed56f4f9f1a68507d1189947e6672 https://doi.org/10.1143/jjap.44.3205 Zobrazit plný text záznamu