Metal oxide thin film transistor based sensing
Autor: | Mateusz T. Madzik, Elangovan Elamurugu, Jaime Viegas |
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Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Materials science business.industry Doping Oxide chemistry.chemical_element Equivalent oxide thickness 02 engineering and technology 021001 nanoscience & nanotechnology Oxide thin-film transistor 01 natural sciences chemistry.chemical_compound chemistry Thin-film transistor Molybdenum 0103 physical sciences Electrode Electronic engineering Optoelectronics 0210 nano-technology business Indium |
Zdroj: | MWSCAS |
DOI: | 10.1109/mwscas.2016.7870044 |
Popis: | Metal oxide based thin film transistors (TFT) have shown strong improvement of their electric characteristics with n-type devices being gradually introduced commercially in display technology. Following on this success path, potential applications of such TFTs to Internet of Things (IoT) chemical sensing enablement are discussed, with a focus on the effect of polyols on molybdenum doped indium oxide and zinc oxide fully transparent TFTs. |
Databáze: | OpenAIRE |
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