Transient grating measurements of ambipolar diffusion and carrier recombination in InGaP/lnAIP multiple quantum wells and InGaP bulk
| Autor: | G. Y. Robinson, M. Prasad, Juan L. A. Chilla, Oscar E. Martínez, M.J. Hafich, Jorge J. Rocca, Carmen S. Menoni |
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| Rok vydání: | 1994 |
| Předmět: |
business.industry
Ambipolar diffusion Chemistry Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor laser theory Condensed Matter::Materials Science Optics Materials Chemistry Optoelectronics Charge carrier Electrical and Electronic Engineering Diffusion (business) Thin film business Diffraction grating Quantum well Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 23:359-362 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf03296065 |
| Popis: | The ambipolar diffusion coefficient and carrier recombination lifetime in InGaP/InAlP multiple quantum wells and InGaP epitaxial layers grown by gas source molecular beam epitaxy have been determined by measuring the diffraction efficiency decay of transient gratings induced by picosecond laser pulses. The multiple quantum well room temperature ambipolar diffusion coefficient of carrier transport parallel to the growth plane was measured to be approximately half that of the bulk material. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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