Some properties of copper-doped gallium phosphide
| Autor: | R.J. Cherry, J.W. Allen |
|---|---|
| Rok vydání: | 1962 |
| Předmět: |
Materials science
Photoconductivity Doping Inorganic chemistry Analytical chemistry chemistry.chemical_element General Chemistry Condensed Matter Physics Copper Acceptor chemistry.chemical_compound chemistry Electrical resistivity and conductivity Gallium phosphide Valence band General Materials Science |
| Zdroj: | Journal of Physics and Chemistry of Solids. 23:509-511 |
| ISSN: | 0022-3697 |
| DOI: | 10.1016/0022-3697(62)90090-2 |
| Popis: | Copper produces an acceptor level in GaP 0.68 eV above the valence band. Semi-insulating GaP made by diffusing copper into initially n -type material can have resistivity of 10 10 Ω/cm at room temperature. Super-linear photoconductivity is observed in the visible region, sub-linear in the infra-red. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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