| Autor: |
Sergey Kuznetsov, Georgiy Teplov |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. |
| DOI: |
10.29003/m1649.silicon-2020/358-361 |
| Popis: |
In this paper, mathematical modeling of memristor has been discussed considering temperature effects and its variation during resistive switching. Temperature-affected parameters of memristor has been listed. A model of memristor has been carried out, including temperature influence on mobility of oxygen vacancies and self-heating effects. The model reveals that increasing temperature causes faster switching, also some problems of window function choice and model optimization have been discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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