Studies of the High Temperature Nitridation Structures of the Si(111) Surface by LEED, AES and EELFS

Autor:	Rong-fu Lin, Hong-chuan Wang, Xun Wang
Rok vydání:	1988
Předmět:	Surface (mathematics) chemistry.chemical_compound Silicon nitride Chemistry Analytical chemistry Structured model
Zdroj:	Springer Series in Surface Sciences ISBN: 9783642733451
DOI:	10.1007/978-3-642-73343-7_62
Popis:	It is well known that the silicon nitride film can be used as a passive film in IC technology. Since 1980 the structure of silicon nitride layers has been studied by several groups [1,2,3]. In this paper, the nitridation structure of the Si(111) surface has been investigated by LEED, AES and EELFS, a technique developed by DE CRESCENZI et al. [4]. Based on the experimental results of EELFS, a new structure model for the nitridation structure of Si(111) surface is proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d537cd156907e6719b5b7b09f7f27de https://doi.org/10.1007/978-3-642-73343-7_62 Zobrazit plný text záznamu