Effect of a Patterned Sapphire Substrate on InGaN-Based p-i-n Ultraviolet Photodetectors
| Autor: | Sung-Nam Lee, Hyun-Jin Lee, Hyunseok Na, Seung-Hye Baek |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Intrinsic semiconductor business.industry General Physics and Astronomy Photodetector 02 engineering and technology 021001 nanoscience & nanotechnology medicine.disease_cause 01 natural sciences Crystallinity 0103 physical sciences medicine Sapphire Optoelectronics Quantum efficiency 0210 nano-technology Absorption (electromagnetic radiation) business Ultraviolet |
| Zdroj: | Journal of the Korean Physical Society. 75:362-366 |
| ISSN: | 1976-8524 0374-4884 |
| Popis: | InGaN/GaN multi-quantum well (MQW) structures were used as an intrinsic semiconductor in InGaN-based p-i-n ultraviolet photodetectors (PDs). The cut-off wavelengths of the PDs grown on normal sapphire substrates (NSSs) and on patterned sapphire substrates (PSSs) were 445 and 450 nm, respectively, which is consistent with the photoluminescence emission wavelength. From the crystal and optical analyses, we found that the crystallinity and the absorption of the PDs grown on PSSs were superior to those of the PDs grown on NSSs. The maximum photoreactivities of the PDs grown on PSSs and on NSSs were 0.176 A/W and 0.109 A/W, respectively. In addition, the external quantum efficiencies of those PDs were 56.1% and 34.8%, respectively. From these results, we suggest that a PSS can play an important role in achieving a high reactivity and external quantum efficiency for InGaN-based PDs due to improved crystallinity and decreased optical absorption in the sapphire substrate. |
| Databáze: | OpenAIRE |
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