High Field Induced Stress Suppression of GIDL Effects in Accumulation-Mode P-Channel TFTs

Autor:	Andrew M. Mccabe, Karl D. Hirschman, Robert George Manley, J. Gregory Couillard, Carlo Kosik Williams
Rok vydání:	2010
Předmět:	Materials science Silicon business.industry Transistor Analytical chemistry chemistry.chemical_element Silicon on insulator Charge (physics) Electron law.invention P channel Induced stress chemistry law Optoelectronics business Single crystal
Zdroj:	ECS Transactions. 33:95-103
ISSN:	1938-6737 1938-5862
Popis:	By utilizing the effects of high energy, or "hot", electrons the GIDL current in an accumulation mode thin-film PFET can be suppressed. Both SOI and single crystal silicon-on-glass (SiOG) substrates were used to examine this effect. This suppression is proposed to be due to local injection of charge into the gate-oxide at the drain end of the transistor creating a mirror charge in the silicon which mimics an asymmetrical lightly-doped drain structure. An overview of theory, modeling, and device characterization is presented in this study. This effect has been shown to be stable and reproducible; a technique to measure the location and quantity of injected charge is under development.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d3a0fa1c33740976ad36db566058326 https://doi.org/10.1149/1.3481223 Zobrazit plný text záznamu