Low shot noise GaAs/AlGaAs heterojunction phototransistors grown by MBE with a δ-doped base

Autor:	Yisong Dai, Xinfa Zhang, Hailin Luo, Yangyuan Wang, Yuchun Chang, Hoi Kwan Chan
Rok vydání:	2001
Předmět:	Materials science Noise-figure meter business.industry Transistor Shot noise Biasing Heterojunction Condensed Matter Physics Photodiode law.invention Inorganic Chemistry law Materials Chemistry Optoelectronics Flicker noise business Noise (radio)
Zdroj:	Journal of Crystal Growth. :233-237
ISSN:	0022-0248
Popis:	Novel GaAs/AlGaAs heterojunction phototransistors with a δ-doped base have been fabricated. Very high gain and low output noise have been measured. The measured noise is composed of shot noise associated with collector quiescent bias current and amplified shot noise due to collector leak current for non-passivated devices. For well-passivated devices, the measured noise is, as predicted previously [Y. Wang, E.S. Yang, J. Appl. Phys. 74 (1993) 6978], just composed of the shot noise associated with collector quiescent bias current. The high gain and low intrinsic noise characteristics of these transistors make them very promising in weak light detection.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d37b7843cfc5a15af9651625f86d7a8 https://doi.org/10.1016/s0022-0248(01)00689-3 Zobrazit plný text záznamu Full Text from ScienceDirect