Dark I–V–T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells
| Autor: | R Hussein, G. Grabosch, W. R. Fahrner, D. Borchert |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Silicon
Renewable Energy Sustainability and the Environment business.industry Analytical chemistry chemistry.chemical_element Heterojunction Dark conductivity Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics chemistry law Electrical resistivity and conductivity Solar cell Metal grid business Dark current |
| Zdroj: | Solar Energy Materials and Solar Cells. 69:123-129 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/s0927-0248(00)00385-8 |
| Popis: | Heterojunction solar cells have been manufactured by depositing n-type a-Si:H on p-type 1–2 Ω cm Cz single-crystalline silicon substrates. An efficiency of 14.2% has been obtained for 1 cm2 solar cells by using a simple (Al/(p) c-Si/(n) a-Si:H/ITO/metal grid) structure. With an additional surface texturing, we have reached an efficiency of 15.3% for 1 cm2 solar cells. We have investigated the dark IV-curves in order to contribute to a better understanding of the basis of solar cells. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect