Phase change memory employing a Ti diffusion barrier for reducing reset current
| Autor: | Sun Woong Kim, D.-H. Ko, Sang-Bom Kang, Joong Kyong Ahn, Choi Seungbum, Dong-ho Ahn, J.H. Park, Jae-myung Lee, Zhenhua Wu, Jung-Sung Kim |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Fabrication
Materials science Diffusion barrier Nanotechnology 02 engineering and technology GeSbTe 01 natural sciences Barrier layer chemistry.chemical_compound 0103 physical sciences Materials Chemistry Diffusion (business) 010302 applied physics business.industry Contact resistance Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Phase-change memory chemistry Electrode Optoelectronics 0210 nano-technology business |
| Zdroj: | Thin Solid Films. 612:135-140 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2016.05.042 |
| Popis: | Phase Change Memory (PCM) has the potential for use as the flash memories for the next generation due to its scalability, long endurance, high speed, and the possibility of random access. To successfully integrate phase change materials of a GeSbTe (GST) alloy in the device fabrications, the presence of a Ti layer is required to obtain proper contact resistance characteristics and also to improve the adhesion property between the GST alloys and the top TiN electrode. The findings reported herein indicate that Ti can readily diffuse into the GST layer and reduce the set resistance when the subsequent device fabrication involves the heating process. As a result, the reset current significantly increases and the endurance cycles of the PCM device are significantly degraded. We proposed the use of a Highly Nitrogen doped GST (HNGST) layer as a barrier to Ti diffusion, in which the presence of the barrier was able to restore the reset current of the PCM devices down to the level of as-etched PCM cell by the use of a 9 nm thick HNGST barrier. In addition, endurance cycles were significantly enhanced from 10 6 to over 10 8 by blocking the diffusion of Ti into the program volume of the cell with the HNGST barrier layer. |
| Databáze: | OpenAIRE |
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