Observation of Dopant Distribution in Compound Semiconductors Using Off-axis Electron Holography

Autor:	S Ootomo, T Hirayama, H Sasaki, K. Yamamoto, Takeyoshi Matsuda
Rok vydání:	2008
Předmět:	chemistry.chemical_compound Materials science Distribution (mathematics) chemistry Dopant Transmission electron microscopy Analytical chemistry Thin film Ion milling machine Focused ion beam Electron holography Gallium arsenide
Zdroj:	Springer Proceedings in Physics ISBN: 9781402086144
DOI:	10.1007/978-1-4020-8615-1_85
Popis:	This paper describes a method to map dopant distributions in compound semiconductors by off-axis electron holography. A cross-sectional transmission electron microscopy (TEM) specimen with n+, n− and p gallium arsenide thin films was prepared using the micro-sampling technique of a focused ion beam and Ar+ ion milling. A phase map was obtained by off-axis phase-shifting electron holography, and the dopant distributions across a p–n junction are clearly observed. Furthermore, the low and high dopant concentration regions are remarkably distinguished with high contrast.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d2837904cdfbafa2b6bb99bafcc2a3d https://doi.org/10.1007/978-1-4020-8615-1_85 Zobrazit plný text záznamu