Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons
| Autor: | L. Palmu, I. Riihimäki, S. Kallijärvi, Eija Tuominen, Ari Virtanen, Esa Tuovinen, J. Nysten, Victor Ovchinnikov, T. Alanko, P. Laitinen, J. Harkonen, Marko Yli-Koski, G. P. Tiourine, Kati Lassila-Perini, A. Pirojenko, S. Nummela, P. Heikkila |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
inorganic chemicals
Physics Nuclear and High Energy Physics Silicon Physics::Instrumentation and Detectors business.industry Annealing (metallurgy) Surface photovoltage technology industry and agriculture Analytical chemistry chemistry.chemical_element Radiation Float-zone silicon equipment and supplies complex mixtures chemistry Optoelectronics Irradiation Particle radiation business Instrumentation Radiation hardening |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 512:85-91 |
| ISSN: | 0168-9002 |
| Popis: | Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect