Resist materials for sub-0.5-μm pattern transfer with demagnifying ion projection lithography (IPL)

Autor: A. Heuberger, Gerhard Stengl, L. M. Buchmann, G. Stangl, F. Paschke, Hans Loschner, C. Traher, L. Csepregi, E. Hammel, S. Jacob, W. Fallmann, K. P. Muller, E. Cekan
Rok vydání: 1989
Předmět:
Zdroj: Microelectronic Engineering. 9:289-293
ISSN: 0167-9317
DOI: 10.1016/0167-9317(89)90067-1
Popis: Different kinds of resist materials were used to prove the high versatility of Ion Projection Lithography (IPL). With standard exposure and developing conditions test structures in the sub-0.5-μm range were obtained routinely. A new dry development process is presented which included helium ion exposure to polyimide and, subsequently, photoablation by an excimer laser.
Databáze: OpenAIRE