Noise And Charge Transport In Carbon Nanotube Devices
| Autor: | Shahed Reza, Jennifer Sippel, Andrew G. Rinzler, Quyen T. Huynh, Gijs Bosman |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry technology industry and agriculture Conductance Nanotechnology Charge (physics) Carbon nanotube Low frequency equipment and supplies Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Noise (electronics) law.invention Metal Condensed Matter::Materials Science Semiconductor law visual_art visual_art.visual_art_medium Optoelectronics business |
| Zdroj: | AIP Conference Proceedings. |
| ISSN: | 0094-243X |
| DOI: | 10.1063/1.2138650 |
| Popis: | The charge transport and noise properties of three terminal, gated devices containing multiple, single wall, metallic and semiconductor carbon nanotubes have been measured as a function of gate and drain bias at 300K. Using pulsed bias the metallic tubes could be burned sequentially enabling the separation of measured conductance and low frequency excess noise into metallic and semiconductor contributions. The relative low frequency excess noise of the metallic tubes was about a factor 100 lower than that of the semiconductor tubes, whereas the conductance of the metallic tubes was significantly higher (10 to 50 times) than that of the semiconductor tubes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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