The impact of deep acceptors on the performance of VPE-GaAs X-ray detectors

Autor:	J. Meinhardt, Michael Fiederle, Y Lien, M. Rogalla, A Söldner-Rembold, R. Irsigler, R Percival, J. Ludwig, K. Runge, T Feldgen, K.W. Benz, M Hornung
Rok vydání:	1998
Předmět:	Physics Nuclear and High Energy Physics Photoluminescence business.industry Detector X-ray detector Epitaxy Free carrier Particle detector Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics Material properties business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 410:92-95
ISSN:	0168-9002
DOI:	10.1016/s0168-9002(98)00171-5
Popis:	Gallium Arsenide layers grown using low pressure Vapour-Phase Epitaxy (LP-VPE) were studied with CV, Hall-measurements and Photoluminescence. The results have been analysed for the general investigation of the influence of material properties on particle detector performance for X-ray applications. This p-type material exhibits a free carrier concentration of 1.3 × 10 11 cm −3 at room temperature and was compensated by the presence of shallow donors and deep acceptors. Because of this, the detector performance was restricted by the space-charge density of the order of 10 14 cm −3 .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3d1481da330bc8cf6a0e0a0d3eb248aa https://doi.org/10.1016/s0168-9002(98)00171-5 Zobrazit plný text záznamu Full Text from ScienceDirect