| Autor: |
X. Mescot, F. Tcheme Wakam, C. Vizioz, F. Aussenac, J.M. Hartmann, Kyung Hwa Lee, Joris Lacord, M. Bawedin, L. Brevard, Pascal Besson, Zdenek Chalupa, Virginie Loup |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). |
| DOI: |
10.1109/eurosoi-ulis53016.2021.9560676 |
| Popis: |
A2RAM devices are fabricated using an adaptation of Si-Nanowire process flow. They include a Si-SiGe heterostructure to improve memory performance. Even the device structure is not exactly what we expect, we succeed to evidence 1T-DRAM programming. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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