Development of electronic band structure of the K-adsorbed Si(111)7 × 7 surface

Autor:	G E Frank-Kamenetskaya, D. V. Daineka, G V Benemanskaya
Rok vydání:	1999
Předmět:	Condensed matter physics Chemistry Photoemission spectroscopy Band gap Fermi level Condensed Matter Physics Semimetal symbols.namesake symbols General Materials Science Work function Atomic physics Electronic band structure Quasi Fermi level Surface states
Zdroj:	Journal of Physics: Condensed Matter. 11:6679-6684
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/11/35/306
Popis:	Adsorption of K on the Si(111)7 ? 7 surface has been investigated in the submonolayer coverage range at room temperature. The method of threshold photoemission spectroscopy using s- and p-polarized light excitation was employed for studying the evolution of surface electronic structure near the Fermi level, the work function and the ionization energy. A qualitative change in character of band structure has been observed, depending on K coverage. Suppression of metallicity of the Si(111)7 ? 7 surface was found at the initial stage of K adsorption. One surface band A1 below the VBM was revealed at low coverage. Increasing K coverage has led to both the appearance of the K-induced band A2 and significant movement of the band towards the Fermi level. The K/Si(111)7 ? 7 interface was found to be semiconducting-like up to saturation coverage. Near saturation, the Fermi level is seen to cross the K-induced band A2. Such surface band structure is identified as being metallic-like. Results indicate metallization via adlayer accompanied by Fermi level pinning.
Databáze:	OpenAIRE
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