Investigation of morphology evolution of the In-rich inclusions and the corresponding defects in InP single crystals

Autor: L.J. Fu, T.N. Sun, X.L. Li, L.J. Gao, Y.L. Shi, S.J. Wang, Yan Wang, H.M. Shao, N.F. Sun, H.S. Liu
Rok vydání: 2015
Předmět:
Zdroj: Crystal Research and Technology. 50
ISSN: 0232-1300
DOI: 10.1002/crat.201570015
Popis: Submicron, micron and millimeter-scale In-rich inclusions with different polyhedral morphologies are observed, which are directionally embedded in the InP matrix along direction. The arrangement direction and morphological change of the In-rich inclusions at different scales are investigated to reveal their morphology evolution. The relative size of the facets ({100} and {111}P/In) bounding the polyhedral In-rich inclusions is different from the reported results in other crystals, especially when the size of In-rich inclusions is up to millimeter-scale. The growth rate dispersion effect and the initial morphologies of the In-rich droplets have an obvious effect on the final shape of the In-rich inclusions. Dislocation enrichment surrounding the In-rich inclusion is observed, which is contributed to the volume expansion of liquid-solid phase transition and the difference of the thermal expansion coefficient and thermal conductivity between In-rich droplet and InP matrix. The size and shape of the dislocation enriched region are closely related to the size and shape of the originating In-rich droplet and the growth condition.
Databáze: OpenAIRE