Rectification and resistive switching in mesoscopic heterostructures based on Bi2Se3
| Autor: | I.М. Shmytko, N.А. Тulina, N.N. Кolesnikov, S.I. Bozhko, А.N. Rossolenko, Andrey M. Ionov, D.N. Borisenko |
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| Rok vydání: | 2015 |
| Předmět: |
Mesoscopic physics
Materials science Spreading resistance profiling Condensed matter physics business.industry Mechanical Engineering Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Condensed Matter::Materials Science Semiconductor Rectification Mechanics of Materials Electric field Topological insulator Optoelectronics General Materials Science business Diode |
| Zdroj: | Materials Letters. 158:403-405 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2015.06.060 |
| Popis: | We fabricated mesoscopic heterostructures based on topological insulator Bi 2 Se 3 which exhibit a bipolar resistive switching (BRS) effect. The BRS effect could be related to the interface effect and the current transfer in such junctions exhibits a diode character with Schottky-like barriers in heavily doped semiconductors. It was shown that the deviation of the current–voltage characteristics (CVC) from the classic current transport Schottky-like diode behavior is due to the influence of the electric field on spreading resistance R s that is temperature dependent and modified in strong electric fields. |
| Databáze: | OpenAIRE |
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