Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films

Autor:	Huiyong Liu, Fuxi Gan, Liqiu Q. Men, Chao Liu, Fusong S. Jiang
Rok vydání:	1996
Předmět:	Argon Materials science business.industry Optical engineering chemistry.chemical_element Optical storage Sputter deposition Laser law.invention Wavelength Optics chemistry law Optoelectronics Thin film business Refractive index
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.248700
Popis:	The optical properties of GeSb2Te4 thin films prepared by vacuum RF-sputtering method at the wavelength region of 400 - 830 nm were studied. A comparatively large absorption was observed in the wavelength range 400 - 600 nm, which matches with the wavelengths of Argon laser. The optical storage characterizations of GeSb2Te4 thin film demonstrate clearly that larger reflectivity contrast can be obtained at lower power Argon laser (514.5 nm) irradiation. The erasing contrast is relatively lower but can be improved by multi-layer films match.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze:	OpenAIRE
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