Electrodeposition of Cu–In–Ga thin metal films for Cu(In, Ga)Se2 based solar cells
Autor: | Ayodhya N. Tiwari, M. Kaelin, N. Stratieva, E. Tzvetkova, M. Ganchev, Sergei Bereznev, J. Kois, Olga Volobujeva |
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Rok vydání: | 2008 |
Předmět: |
Morphology (linguistics)
Photoluminescence Thiocyanate Inorganic chemistry Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Electrolyte Electrochemistry Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Chemical engineering Materials Chemistry Gallium Deposition (law) |
Zdroj: | Thin Solid Films. 516:5948-5952 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2007.10.080 |
Popis: | Cu–In–Ga (CIG) layers of graded composition have been grown by one-step electrodeposition from thiocyanate complex electrolytes. The Ga-content is adjusted from two to 30 at.% by changing stirring rate, deposition time and solution composition. The as prepared CIG precursors are selenizated at 500 °C in a two-temperature zone furnace at different Se-vapour pressures. The influence of the Se-vapour pressure on morphology and photoluminescence properties of Cu(In, Ga)Se 2 films are discussed. |
Databáze: | OpenAIRE |
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