Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots

Autor:	André Strittmatter, K. Posilovic, T. D. Germann, Dieter Bimberg, U. W. Pohl, Th. Kettler, J. Pohl
Rok vydání:	2008
Předmět:	Photoluminescence Threshold current Materials science business.industry Stacking Condensed Matter Physics Laser Epitaxy law.invention Blueshift Inorganic Chemistry Wavelength law Quantum dot Materials Chemistry Optoelectronics business
Zdroj:	Journal of Crystal Growth. 310:5066-5068
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2008.07.069
Popis:	The blue shift of metalorganic vapor phase epitaxy grown 1.3 μm InGaAs quantum dot (QD) emission wavelength during stacking and overgrowth is investigated. Defect generation in the vicinity or with the QD layers is identified as the major source for the blue shift of the photoluminescence. Defect reduction by optimisation of growth parameters leads to efficient suppression of the blue shift. Thereby, 6-fold stacked InGaAs QD laser structures with negligible blue shift of only 20 nm are realized at 1.3 μm wavelength. First devices emit at 1281 nm exhibiting threshold current densities of 600 A/cm 2 .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3ce485dab018171a57771d3b6826d5ec https://doi.org/10.1016/j.jcrysgro.2008.07.069 Zobrazit plný text záznamu Full Text from ScienceDirect