Colloidal quantum dot active layers for light emitting diodes
| Autor: | Mark O’Steen, Jennifer Pagan, Kinnari Patel, Philip T. Barletta, Michael T. Ahrens, Casey C. Burkhart, Edward B. Stokes |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Quantum dot display Nanotechnology Heterojunction Gallium nitride Electroluminescence Condensed Matter Physics Electronic Optical and Magnetic Materials Active layer law.invention chemistry.chemical_compound chemistry Quantum dot laser law Quantum dot Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Light-emitting diode |
| Zdroj: | Solid-State Electronics. 50:1461-1465 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2006.06.009 |
| Popis: | In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. Properties of p-type Mg doped overgrowth GaN are examined via circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). Electroluminescence of LED test structures is reported, and an ideality factor of n = 1.6 is demonstrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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