Piezospectroscopy of a GaAs/Ga0.73Al0.27As single quantum well structure: Piezoelectric effects
| Autor: | Fred H. Pollak, H. Qiang, R. N. Sacks |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
chemistry.chemical_classification
Condensed matter physics business.industry General Chemistry Condensed Matter Physics Piezoelectricity Potential theory Spectral line Optical reflection law.invention Optics chemistry Shear (geology) law Materials Chemistry Hydrostatic equilibrium business Inorganic compound Quantum well |
| Zdroj: | Solid State Communications. 84:51-55 |
| ISSN: | 0038-1098 |
| Popis: | We have investigated the effects of large uniaxial stress (⇀T) along [100] (≈10 kbar) and [110] (≈16 kbar) on the photoreflectance spectra at 300K of a (001) GaAs/Ga0.73Al0.27As single quantum well structure. For ⇀T‖[100] the stress-induced shifts can be explained using only deformation potential theory while for ⇀T‖[100] there also are effects due to the piezoelectric field generated along the growth direction. However, the magnitude of this field is considerably smaller than predicted by theory, indicating the presence of screening charges. Also the hydrostatic (a) and shear (b) deformation potentials of the direct gap of Ga0.73Al0.27As have been evaluated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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