Development of the structure of thin SiO2 films during thermal growth on Si substrate
| Autor: | I. P. Lisovskii, V. V. Khatko, V. G. Litovchenko |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Thermal oxidation
Thermal growth Materials science Silicon Kinetics Relaxation (NMR) Oxide chemistry.chemical_element Condensed Matter Physics Oxygen Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Stress (mechanics) chemistry.chemical_compound chemistry Chemical engineering Electrical and Electronic Engineering |
| Zdroj: | Microelectronic Engineering. 22:39-42 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(93)90126-p |
| Popis: | The development of the structure of ultra-thin SiO 2 layers was monitored during thermal oxidation of silicon in O 2 . The oxide density, mechanical stress and IR-absorption exhibit correlated nonmonotonic kinetics. It is proposed, that these peculiarities result from the relaxation of oxide stress by means of the creation of oxygen vacancies and formation of a less dense structure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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