Wavy microstructures formed at the SiO2/Si interface under the action of high-power ion-beam pulses
| Autor: | O. V. Krivozubov, V. S. Kovivchak, N. A. Davletkil’deev, T. V. Panova, E. V. Knyazev |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Ion beam Silicon business.industry Oxide chemistry.chemical_element Nanotechnology Nanosecond Microstructure Action (physics) Power (physics) Condensed Matter::Materials Science chemistry.chemical_compound chemistry Optoelectronics business Current density |
| Zdroj: | Technical Physics Letters. 39:147-149 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785013020090 |
| Popis: | The formation of wavy microstructures under the action of a nanosecond pulsed high-power ion beam on the surface of single-crystalline silicon covered with intrinsic oxide layers of various thickness has been studied. Morphological features of the observed structures depend on the oxide layer thickness and ion beam current density. Possible mechanisms of formation of these microstructures are considered. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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